专利详情

专利名称	不純物のゲッタリングプロセスで絶縁層付きの半導体基板を製造する方法
申请号	JP20130546558	专利类型	JP
公开（公告）号	JP5752264(B2)	公开（授权）日	2015.07.22
申请（专利权）人	中国科学院上海微系统与信息技术研究所	发明（设计）人	ウェイ，シン;ワン，ゾンダン;イエ，フェイ;カオ，ゴンバイ;リン，チェング;ザン，ミャオ;ワン，シ
主分类号	H01L21/322	IPC主分类号	H01L21/322;H01L21/02;H01L21/304;H01L27/12
专利有效期	不純物のゲッタリングプロセスで絶縁層付きの半導体基板を製造する方法至不純物のゲッタリングプロセスで絶縁層付きの半導体基板を製造する方法	法律状态
说明书摘要	A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded.