专利详情

专利名称	Semiconductor memory device and method for accessing the same
申请号	US201213508204	专利类型	US
公开（公告）号	US9542990(B2)	公开（授权）日	2017.01.10
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Zhengyong;Luo Zhijiong
主分类号	G11C13/02	IPC主分类号	G11C13/02;G11C11/403;G11C13/00;H01L27/108
专利有效期	Semiconductor memory device and method for accessing the same 至Semiconductor memory device and method for accessing the same	法律状态
说明书摘要	A semiconductor memory device and a method for accessing the same are disclosed. The semiconductor memory device includes an oxide heterojunction transistor which includes: an oxide substrate; an oxide film on the oxide substrate, wherein an interfacial layer between the oxide substrate and the oxide film behaves like two-dimensional electron gas; a source electrode and a drain electrode being located on the oxide film and electrically connected with the interfacial layer; a front gate on the oxide film; and a back gate on a lower surface of the oxide substrate, wherein the source electrode and the drain electrode of the oxide heterojunction transistor are respectively connected with a first word line and a first bit line for reading operation, and wherein the front gate and the back gate are respectively connected with a second word line and a second bit line for writing operation.