专利详情

专利名称	Isolation structure, method for manufacturing the same, and semiconductor device having the structure
申请号	US201113142378	专利类型	US
公开（公告）号	US9543188(B2)	公开（授权）日	2017.01.10
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Luo Zhijiong;Yin Haizhou;Zhu Huilong;Zhong Huicai
主分类号	H01L21/76	IPC主分类号	H01L21/76;H01L21/762;H01L21/8234
专利有效期	Isolation structure, method for manufacturing the same, and semiconductor device having the structure 至Isolation structure, method for manufacturing the same, and semiconductor device having the structure	法律状态
说明书摘要	The present invention provides an isolation structure for a semiconductor substrate and a method for manufacturing the same, as well as a semiconductor device having the structure. The present invention relates to the field of semiconductor manufacture. The isolation structure comprises: a trench embedded in a semiconductor substrate; an oxide layer covering the bottom and sidewalls of the trench, and isolation material in the trench and on the oxide layer, wherein a portion of the oxide layer on an upper portion of the sidewalls of the trench comprises lanthanum-rich oxide. By the trench isolation structure according to the present invention, metal lanthanum in the lanthanum-rich oxide can diffuse into corners of the oxide layer of the gate stack, thus alleviating the impact of the narrow channel effect and making the threshold voltage adjustable.