专利详情

专利名称	FinFET and method of manufacturing same
申请号	US201314904140	专利类型	US
公开（公告）号	US9515169(B2)	公开（授权）日	2016.12.06
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Liu Yunfei
主分类号	H01L29/66	IPC主分类号	H01L29/66;H01L29/78;H01L21/02;H01L21/311;H01L21/762;H01L29/06
专利有效期	FinFET and method of manufacturing same 至FinFET and method of manufacturing same	法律状态
说明书摘要	There is provided a FinFET fabricating method, comprising: a. providing a substrate ; b. forming a fin on the substrate; c. forming a channel protective layer on the fin; d. forming a shallow trench isolation on both sides of the fin; e. forming a sacrificial gate stack and a spacer on the top surface and sidewalls of the channel region which is in the middle of the fin; f. forming source/drain regions in both ends of the fin; g. depositing an interlayer dielectric layer on the sacrificial gate stack and the source/drain regions, planarizing later to expose the sacrificial gate stack; h. removing the sacrificial gate stack stack to form a sacrificial gate vacancy and expose the channel region and the channel protective layer; i. covering a portion of the semiconductor structure in one end of the fin with a photoresist layer; j. removing a portion of the spacer not covered; k. removing the photoresist layer and filling a gate stack in the sacrificial gate vacancy; l. planarizing the semiconductor structure formed by the foregoing steps to expose the channel protective layer and forming a first separated gate stack and a second separated gate stack. Comparing with the prior art, control ability of independent-gate-voltage FinFET can be effectively improved and it is good for device performance.