专利详情

专利名称	Method for manufacturing semiconductor device
申请号	US201214399260	专利类型	US
公开（公告）号	US9530861(B2)	公开（授权）日	2016.12.27
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Zhang Keke
主分类号	H01L29/66	IPC主分类号	H01L29/66;H01L29/78;H01L21/28;H01L29/49;H01L29/51
专利有效期	Method for manufacturing semiconductor device 至Method for manufacturing semiconductor device	法律状态
说明书摘要	The present invention discloses a method for manufacturing a semiconductor device, comprising the steps of: forming a dummy gate stack structure on a substrate, wherein the dummy gate stack structure contains carbon-based materials; forming source/drain region in the substrate on both sides of the dummy gate stack structure; performing etching to remove the dummy gate stack structure until the substrate is exposed, resulting in a gate trench; and forming a gate stack structure in the gate trench. In accordance with the method for manufacturing a semiconductor device of the present invention, the dummy gate made of carbon-based materials is used to substitute the dummy gate made of silicon-based materials, then no oxide liner and/or etch blocking layer needs be added while the dummy gate is removed by etching in the gate last process, thus the reliability of device is ensured while the process is simplified and the cost is reduced.