专利详情

专利名称	Graphene transistor optical detector based on metamaterial structure and application thereof
申请号	US201314761907	专利类型	US
公开（公告）号	US9444002(B2)	公开（授权）日	2016.09.13
申请（专利权）人	苏州纳米技术与纳米仿生研究所	发明（设计）人	Chen Qin;Song Shichao
主分类号	H01L29/06	IPC主分类号	H01L29/06;H01L31/113;H01L31/028;H01L29/16;H01L29/08;H01L29/423;H01L31/0216;H01L27/146
专利有效期	Graphene transistor optical detector based on metamaterial structure and application thereof 至Graphene transistor optical detector based on metamaterial structure and application thereof	法律状态
说明书摘要	A graphene transistor optical detector based on a metamaterial structure and an application thereof. The optical detector includes a substrate, a gate metal layer, a gate medium layer, a graphene layer, a source and drain metal layer successively arranged from bottom to top, wherein a local region of at least the source and drain metal layer has a periodic micro/nanostructure, the periodic micro/nanostructure being matched with the gate metal layer and the gate medium layer to form a metamaterial structure having a complete absorption characteristic. By changing the refractive index, thickness or the like of material for the periodic micro/nanostructure and the gate medium layer, a light absorption frequency band of the metamaterial structure can be regulated. The optical detector provided by the present invention has higher flexibility and narrow-band response, and can work under visible light to infrared even longer wavebands by selecting different metamaterial structures.