Semiconductor arrangements and methods for manufacturing the same
- 申请号：US201314761262
- 专利类型：US
- 申请（专利权）人：中国科学院微电子研究所
- 公开(公开)号：US9461068(B2)
- 公开(公开)日：2016.10.04
- 法律状态：
- 出售价格： 面议 立即咨询
专利详情
| 专利名称 | Semiconductor arrangements and methods for manufacturing the same | ||
| 申请号 | US201314761262 | 专利类型 | US |
| 公开（公告）号 | US9461068(B2) | 公开（授权）日 | 2016.10.04 |
| 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong |
| 主分类号 | H01L29/78 | IPC主分类号 | H01L29/78;H01L27/12;H01L29/66;H01L29/06;H01L29/423;H01L29/165;H01L21/84 |
| 专利有效期 | Semiconductor arrangements and methods for manufacturing the same 至Semiconductor arrangements and methods for manufacturing the same | 法律状态 | |
| 说明书摘要 | Semiconductor arrangements and methods for manufacturing the same are provided. In one embodiment, the arrangement may include: a semiconductor on insulator (SOI) substrate, comprising a base substrate, a buried dielectric layer, and a SOI layer; a back gate formed on the SOI substrate and passing through the buried dielectric layer to be in electric contact with the base substrate; fins formed from the SOI layer on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective fins. | ||
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