专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201214394802	专利类型	US
公开（公告）号	US9263581(B2)	公开（授权）日	2016.02.16
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Yin Haizhou;Luo Zhijiong;Liang Qingqing
主分类号	H01L23/62	IPC主分类号	H01L23/62;H01L29/78;H01L29/66;H01L29/786;H01L21/265;H01L21/324;H01L29/06
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	A method for manufacturing a semiconductor structure comprises the following steps: providing an SOI substrate and forming a gate structure on the SOI substrate; implanting ions to induce stress in the semiconductor structure by using the gate structure as mask to form a stress-inducing region, which is located under the BOX layer on the SOI substrate on both sides of the gate structure. A semiconductor structure manufactured according to the above method is also disclosed. The semiconductor structure and the method for manufacturing the same disclosed in the present application form on the ground layer a stress-inducing region, which provides favorable stress to the semiconductor device channel and contributes to the improvement of the semiconductor device performance.