专利详情

专利名称	Methods for manufacturing semiconductor devices
申请号	US201514662963	专利类型	US
公开（公告）号	US9418835(B2)	公开（授权）日	2016.08.16
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Wang Guilei;Liu Jinbiao;Li Junfeng
主分类号	H01L21/02	IPC主分类号	H01L21/02;H01L21/265
专利有效期	Methods for manufacturing semiconductor devices 至Methods for manufacturing semiconductor devices	法律状态
说明书摘要	The present disclosure provides a method of manufacturing a semiconductor device having silicon nitride with a tensile stress, the method comprising: c1) introducing and pre-stabilizing NH3 gas and N2 gas; c2) introducing silane; c3) igniting the gases by a radio-frequency source; c4) depositing SiN; and c5) processing the SiN by using a nitrogen ion implantation. According to the present disclosure, the nitrogen content in the SiN film can be enhanced by the nitrogen ion implantation and impinging, thereby increasing the density of the film. In this way, the acid resistance of the SiN with tensile stress is enhanced, so that the SiN with tensile stress may be integrated in a dual-strained liner of a gate-last process, so as to effectively improve the properties and reliability of the device.