专利详情

专利名称	Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process
申请号	US201214119864	专利类型	US
公开（公告）号	US9419095(B2)	公开（授权）日	2016.08.16
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Li Chunlong;Li Junfeng;Yan Jiang;Zhao Chao
主分类号	H01L21/338	IPC主分类号	H01L21/338;H01L29/66;H01L29/423;H01L29/51;H01L21/28
专利有效期	Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process 至Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process	法律状态
说明书摘要	A method for manufacturing a dummy gate in a gate-last process and a dummy gate in a gate-last process are provided. The method includes: providing a semiconductor substrate; growing a gate oxide layer on the semiconductor substrate; depositing bottom-layer amorphous silicon on the gate oxide layer; depositing an ONO structured hard mask on the bottom-layer amorphous silicon; depositing top-layer amorphous silicon on the ONO structured hard mask; depositing a hard mask layer on the top-layer amorphous silicon; forming photoresist lines on the hard mask layer, and trimming the formed photoresist lines so that the trimmed photoresist lines a width less than or equal to 22 nm; and etching the hard mask layer, the top-layer amorphous silicon, the ONO structured hard mask and the bottom-layer amorphous silicon in accordance with the trimmed photoresist lines, and removing the photoresist lines, the hard mask layer and the top-layer amorphous silicon.