专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201114354884	专利类型	US
公开（公告）号	US9209269(B2)	公开（授权）日	2015.12.08
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Xu Jing;Liu Yunfei
主分类号	H01L27/12	IPC主分类号	H01L27/12;H01L29/66;H01L29/786;H01L21/285;H01L21/324;H01L29/45
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	A method for manufacturing a semiconductor structure comprises following steps: providing an SOI substrate, forming a gate stack on the SOI substrate, forming sidewall spacers on sidewalls of the gate stack, and forming source/drain regions on each side of the gate stack; depositing a first metal layer on surfaces of an entire semiconductor structure, and then removing the first metal layer; forming an amorphous semiconductor layer on surfaces of the source/drain regions; depositing a second metal layer on surfaces of the entire semiconductor structure, and then removing the second metal layer; and annealing the semiconductor structure. Accordingly, the present invention further provides a semiconductor structure. The present invention is capable of effectively reducing contact resistance at source/drain regions.