专利详情

专利名称	Semiconductor device and method for manufacturing the same
申请号	US201514696616	专利类型	US
公开（公告）号	US9431504(B2)	公开（授权）日	2016.08.30
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Huaxiang;Zhang Yongkui;Zhao Zhiguo;Lu Zhiyong;Zhu Huilong
主分类号	H01L29/49	IPC主分类号	H01L29/49;H01L29/10;H01L29/66;H01L21/8234;H01L27/088;H01L21/265
专利有效期	Semiconductor device and method for manufacturing the same 至Semiconductor device and method for manufacturing the same	法律状态
说明书摘要	A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided.