专利详情

专利名称	Method for manufacturing semiconductor device
申请号	US201514943706	专利类型	US
公开（公告）号	US9412657(B2)	公开（授权）日	2016.08.09
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhong Huicai;Zhao Chao;Zhu Huilong
主分类号	H01L21/4763	IPC主分类号	H01L21/4763;H01L21/768
专利有效期	Method for manufacturing semiconductor device 至Method for manufacturing semiconductor device	法律状态
说明书摘要	In a method for manufacturing a semiconductor, a Through Silicon Via (TSV) template wafer and production wafers form a sandwich structure, in which the TSV template wafer has TSV structures uniformly distributed therein, for providing electrical connection between the production wafers to form 3D interconnection. The TSV template wafer is obtained by thinning a semiconductor wafer, which facilitates reducing the difficulty in etching and filling. Connection parts are provided on the TSV template wafer, for convenience of interconnection between the overlying and underlying production wafers, which facilitates reducing the difficulty in alignment and improving the convenience of design of electrical connection for 3D devices.