专利详情

专利名称	Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process
申请号	US201214119862	专利类型	US
公开（公告）号	US9202890(B2)	公开（授权）日	2015.12.01
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Li Chunlong;Li Junfeng;Yan Jiang;Zhao Chao
主分类号	H01L21/8249	IPC主分类号	H01L21/8249;H01L29/66;H01L21/28;H01L29/78;H01L29/423
专利有效期	Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process 至Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process	法律状态
说明书摘要	A method for manufacturing a dummy gate in a gate-last process is provided. The method includes: providing a semiconductor substrate; growing a gate oxide layer on the semiconductor substrate; depositing bottom-layer amorphous silicon on the gate oxide layer; depositing an ONO structured hard mask on the bottom-layer amorphous silicon; depositing top-layer amorphous silicon on the ONO structured hard mask; depositing a hard mask layer on the top-layer amorphous silicon; forming photoresist lines having a width ranging from 32 nm to 45 nm on the hard mask layer; and etching the hard mask layer, the top-layer amorphous silicon, the ONO structured hard mask and the bottom-layer amorphous silicon in accordance with the photoresist lines, and removing the photoresist lines, the hard mask layer and the top-layer α-Si. Correspondingly, a dummy gate in a gate-last process is also provided.