专利详情

专利名称	Phase-change storage unit containing TiSiN material layer and method for preparing the same
申请号	US201214123454	专利类型	US
公开（公告）号	US9276202(B2)	公开（授权）日	2016.03.01
申请（专利权）人	中国科学院上海微系统与信息技术研究所	发明（设计）人	Song Zhitang;Gong Yuefeng;Rao Feng;Liu Bo;Kang Yong;Chen Bangming
主分类号	H01L21/20	IPC主分类号	H01L21/20;H01L29/00;H01L45/00
专利有效期	Phase-change storage unit containing TiSiN material layer and method for preparing the same 至Phase-change storage unit containing TiSiN material layer and method for preparing the same	法律状态
说明书摘要	The present invention provides a phase-change storage unit containing a TiSiN material layer and a method for preparing the same. The phase-change storage unit includes a phase-change material layer and a lower electrode located there below, the phase-change material layer and the lower electrode are connected by a TiSiN material layer, the lower electrode includes a bottom and a sheet side connected to the bottom, the sheet side is perpendicular to the bottom to form a blade structure, and the top of the sheet side contacts the TiSiN material layer. The present invention adopts annealing to increase the grain size of the electrode so as to reduce the overall resistance of the device and form a TiSiN material layer on the top of the lower electrode so as to reduce the effective operation region. The phase-change storage unit of the present invention is applied to a phase-change memory to achieve the advantages such as low power consumption, high density and high data retention performance.