专利详情

专利名称	Apparatus with two-chamber structure for growing silicon carbide crystals
申请号	US201013379608	专利类型	US
公开（公告）号	US9228275(B2)	公开（授权）日	2016.01.05
申请（专利权）人	中国科学院上海硅酸盐研究所	发明（设计）人	Chen Zhizhan;Shi Erwei;Yan Chengfeng;Xiao Bing
主分类号	C30B35/00	IPC主分类号	C30B35/00;C30B29/36;C30B23/00
专利有效期	Apparatus with two-chamber structure for growing silicon carbide crystals 至Apparatus with two-chamber structure for growing silicon carbide crystals	法律状态
说明书摘要	An apparatus with two-chamber structure for growing silicon carbide (SiC) crystals is disclosed. The apparatus comprises a sample feed chamber and a crystal growth chamber, both of which are separately connected with each other by a vacuum baffle valve and connected with a vacuum system. The crystal growth apparatus ensures that the insulation materials in the crystal growth chamber cannot contact with air, minimizes the adsorption of nitrogen and pollutants on the insulation materials and the growth chamber, improves purity of SiC crystals and achieves precise control of the impurities so that growth of high-quality SiC crystals such as conductive, doped semi-insulating or high-purity semi-insulating SiC crystals and the like is enabled.