专利详情

专利名称	Method of introducing strain into channel and device manufactured by using the method
申请号	US201113318344	专利类型	US
公开（公告）号	US8748272(B2)	公开（授权）日	2014.06.10
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Huaxiang;Xu Qiuxia;Cheng Dapeng
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L29/76;H01L29/66;H01L29/78;H01L29/10;H01L21/8238
专利有效期	Method of introducing strain into channel and device manufactured by using the method 至Method of introducing strain into channel and device manufactured by using the method	法律状态
说明书摘要	The present invention relates to a method of introducing strain into a channel and a device manufactured by using the method, the method comprising: providing a semiconductor substrate; forming a channel in the semiconductor substrate; forming a first gate dielectric layer on the channel; forming a polysilicon gate layer on the first gate dielectric layer; doping or implanting a first element into the polysilicon gate layer; removing a part of the first gate dielectric layer and polysilicon gate layer to thereby form a first gate structure; forming a source/drain extension region in the channel; forming spacers on both sides of the first gate structure; forming a source/drain in the channel; and performing annealing such that lattice change occurs in the polysilicon that is doped or implanted with the first element in the high-temperature crystallization process, thereby producing a first strain in the polysilicon gate layer, and introducing the first strain through the gate dielectric layer to the channel. This method has greater process flexibility and simple process complexity with no additional process cost.