专利详情

专利名称	Semiconductor devices and methods for manufacturing the same
申请号	US201213623567	专利类型	US
公开（公告）号	US9064954(B2)	公开（授权）日	2015.06.23
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Liang Qingqing;Zhong Huicai
主分类号	H01L29/78	IPC主分类号	H01L29/78;H01L29/66;H01L29/165
专利有效期	Semiconductor devices and methods for manufacturing the same 至Semiconductor devices and methods for manufacturing the same	法律状态
说明书摘要	Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, a method includes forming a first shielding layer on a substrate. The method further includes forming one of source and drain regions, which is stressed, with the first shielding layer as a mask. The method further includes forming a second shielding layer on the substrate, and forming the other of the source and drain regions with the second shielding layer as a mask. The method further includes removing a portion of the second shielding layer which is next to the other of the source and drain regions. The method further includes forming a gate dielectric layer, and forming a gate conductor as a spacer on a sidewall of a remaining portion of the second shielding layer.