专利详情

专利名称	Semiconductor device and method of manufacturing the same
申请号	US201213989297	专利类型	US
公开（公告）号	US8802533(B1)	公开（授权）日	2014.08.12
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Qin Changliang;Yin Huaxiang
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L29/66;H01L29/78
专利有效期	Semiconductor device and method of manufacturing the same 至Semiconductor device and method of manufacturing the same	法律状态
说明书摘要	A transistor device comprising epitaxial LDD and Halo regions and a method of manufacturing the same are disclosed. According to embodiments of the present disclosure, the method may comprise: forming a gate stack on a semiconductor substrate; forming a gate spacer which covers the top of the gate stack and sidewalls of the gate stack; forming source/drain grooves; epitaxially growing a Halo material layer in the source/drain grooves, wherein the Halo material layer has a first doping element therein; epitaxially growing source/drain regions which apply stress to a channel region of the device, wherein the source/drain regions have a second doping element, opposite in conductivity to the first doping element, therein; isotropically etching the source/drain regions to remove portions of the source/drain regions, wherein the etching also removes portions of the Halo material layer directly under the gate spacer and extends to the channel region to some extent, wherein remaining portions of the Halo material layer constitute Halo regions of the device; and epitaxially growing an LDD material layer to form LDD regions of the device.