专利详情

专利名称	Semiconducor device and method for manufacturing the same
申请号	US201113395608	专利类型	US
公开（公告）号	US8802518(B2)	公开（授权）日	2014.08.12
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Wang Wenwu;Zhao Chao;Han Kai;Chen Dapeng
主分类号	H01L29/66	IPC主分类号	H01L29/66;H01L21/8238;H01L21/28;H01L29/49;H01L21/8234;H01L29/51;H01L29/423
专利有效期	Semiconducor device and method for manufacturing the same 至Semiconducor device and method for manufacturing the same	法律状态
说明书摘要	A semiconductor device and a method for manufacturing the same, the method comprising: providing a semiconductor substrate; forming a dummy gate area on the substrate, forming spacers on sidewalls of the gate area, and forming source and drain areas in the semiconductor substrate on both sides of the dummy gate area, the dummy gate area comprising an interface layer and a dummy gate electrode; forming a dielectric cap layer on the dummy gate area and source and drain areas; planarizing the device with the dielectric cap layer on the source and drain areas as a stop layer; further removing the dummy gate electrode to expose the interface layer; and forming replacement gate area on the interface layer. The thickness of the gate groove may be controlled by the thickness of the dielectric cap layer, and the replacement gates of desired thickness and width may be further formed upon requirements. Thus, the aspect ratio of the gate groove is reduced and a sufficient low gate resistance is ensured.