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Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same

  • 申请号:US201113510390
  • 专利类型:US
  • 申请(专利权)人:中国科学院微电子研究所
  • 公开(公开)号:US9087691(B2)
  • 公开(公开)日:2015.07.21
  • 法律状态:
  • 出售价格: 面议
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专利详情

专利名称 Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same
申请号 US201113510390 专利类型 US
公开(公告)号 US9087691(B2) 公开(授权)日 2015.07.21
申请(专利权)人 中国科学院微电子研究所 发明(设计)人 Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou
主分类号 H01L21/336 IPC主分类号 H01L21/336;H01L21/8234;H01L21/20;H01L21/36;H01L21/02;H01L29/775;H01L29/06;H01L29/16;H01L29/20;H01L29/66;H01L29/786;B82Y10/00;B82Y40/00;B82Y30/00
专利有效期 Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same 至Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same 法律状态
说明书摘要 A MOSFET with a graphene nano-ribbon, and a method for manufacturing the same are provided. The MOSFET comprises an insulating substrate; and an oxide protection layer on the insulating substrate. At least one graphene nano-ribbon is embedded in the oxide protection layer and has a surface which is exposed at a side surface of the oxide protection layer. A channel region is provided in each of the at least one graphene nano-ribbon. A source region and a drain regions are provided in each of the at least one graphene nano-ribbon. The channel region is located between the source region and the drain region. A gate dielectric is positioned on the at least one graphene nano-ribbon. A gate conductor on the gate dielectric. A source and drain contacts contact the source region and the drain region respectively on the side surface of the oxide protection layer.

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