Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same
- 申请号:US201113510390
- 专利类型:US
- 申请(专利权)人:中国科学院微电子研究所
- 公开(公开)号:US9087691(B2)
- 公开(公开)日:2015.07.21
- 法律状态:
- 出售价格: 面议 立即咨询
专利详情
专利名称 | Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same | ||
申请号 | US201113510390 | 专利类型 | US |
公开(公告)号 | US9087691(B2) | 公开(授权)日 | 2015.07.21 |
申请(专利权)人 | 中国科学院微电子研究所 | 发明(设计)人 | Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou |
主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L21/8234;H01L21/20;H01L21/36;H01L21/02;H01L29/775;H01L29/06;H01L29/16;H01L29/20;H01L29/66;H01L29/786;B82Y10/00;B82Y40/00;B82Y30/00 |
专利有效期 | Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same 至Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same | 法律状态 | |
说明书摘要 | A MOSFET with a graphene nano-ribbon, and a method for manufacturing the same are provided. The MOSFET comprises an insulating substrate; and an oxide protection layer on the insulating substrate. At least one graphene nano-ribbon is embedded in the oxide protection layer and has a surface which is exposed at a side surface of the oxide protection layer. A channel region is provided in each of the at least one graphene nano-ribbon. A source region and a drain regions are provided in each of the at least one graphene nano-ribbon. The channel region is located between the source region and the drain region. A gate dielectric is positioned on the at least one graphene nano-ribbon. A gate conductor on the gate dielectric. A source and drain contacts contact the source region and the drain region respectively on the side surface of the oxide protection layer. |
交易流程
-
01
选取所需
专利 -
02
确认专利
可交易 - 03 签订合同
- 04 上报材料
-
05
确认变更
成功 - 06 支付尾款
- 07 交付证书
过户资料
平台保障
1、源头对接,价格透明
2、平台验证,实名审核
3、合同监控,代办手续
4、专员跟进,交易保障
- 用户留言
暂时还没有用户留言