专利详情

专利名称	Method for fabricating contact electrode and semiconductor device
申请号	US201113129075	专利类型	US
公开（公告）号	US8803208(B2)	公开（授权）日	2014.08.12
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Yin Haizhou;Luo Zhijiong
主分类号	H01L29/78	IPC主分类号	H01L29/78;H01L21/8234;H01L23/485;H01L29/66;H01L29/417
专利有效期	Method for fabricating contact electrode and semiconductor device 至Method for fabricating contact electrode and semiconductor device	法律状态
说明书摘要	The invention provides a semiconductor device comprising: a substrate; a gate, which is formed on the substrate; a source and a drain, which are located on opposite sides of the gate, respectively; a contact, which contacts with the source and/or the drain, wherein the contact has an enlarged end at an end which is in contact with the source and/or the drain. In the present invention, since the contact area of the contact is increased on the interface in contact with the source/the drain, the contact resistance can be reduced, and thus the performances of the semiconductor device can be guaranteed/improved. The present invention further provides a method of fabricating the semiconductor device (especially the contact therein) as previously described.