专利详情

专利名称	Method for manufacturing ordered nanowire array of NiO doped with Pt in situ
申请号	US201314760890	专利类型	US
公开（公告）号	US9418843(B2)	公开（授权）日	2016.08.16
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Li Dongmei;Chen Xin;Liang Shengfa;Niu Jiebin;Zhang Peiwen;Liu Yu;Li Xiaojing;Zhan Shuang;Zhang Hao;Luo Qing;Xie Changqing;Liu Ming
主分类号	H01L21/00	IPC主分类号	H01L21/00;H01L21/02;H01L21/465;G01N33/00;B82Y10/00;B82Y40/00
专利有效期	Method for manufacturing ordered nanowire array of NiO doped with Pt in situ 至Method for manufacturing ordered nanowire array of NiO doped with Pt in situ	法律状态
说明书摘要	The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt. The present invention is simple and practical and the sensitivity and reliability of the doped sensor on the gas of CO and H2 are greatly improved.