专利详情

专利名称	Method for manufacturing three-dimensional semiconductor memory device
申请号	US201113880641	专利类型	US
公开（公告）号	US9070872(B2)	公开（授权）日	2015.06.30
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Huo Zongliang;Liu Ming
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L45/00;H01L27/06;H01L27/10;H01L27/24
专利有效期	Method for manufacturing three-dimensional semiconductor memory device 至Method for manufacturing three-dimensional semiconductor memory device	法律状态
说明书摘要	The present disclosure provides a method for manufacturing a three-dimensional semiconductor memory device. In the method, a storage array is divided into a plurality of storage sub-arrays. As a result, a respective via of each storage sub-array can be etched respectively, which is different from the prior art, where a via for a bottom electrode of a plurality of layers of resistive cells is etched at one time. The vias are filled with metal so that storage sub-arrays are connected with each other. The method for manufacturing the three-dimensional semiconductor memory device according to the present disclosure can substantially reduce process complexity and difficulty of etching process in high-density integration, and also improve a number of layers of the resistive cells integrated in the storage array.