专利详情

专利名称	Shallow trench isolation structure, manufacturing method thereof and a device based on the structure
申请号	US201113519573	专利类型	US
公开（公告）号	US9070744(B2)	公开（授权）日	2015.06.30
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yan Jiang
主分类号	H01L21/76	IPC主分类号	H01L21/76;H01L21/762
专利有效期	Shallow trench isolation structure, manufacturing method thereof and a device based on the structure 至Shallow trench isolation structure, manufacturing method thereof and a device based on the structure	法律状态
说明书摘要	The present invention relates to a shallow trench isolation structure, manufacturing method thereof and a device based on the structure. The present invention provides a method for manufacturing a shallow trench isolation (STI) structure, characterized in comprising the following steps: providing a semiconductor substrate; forming an insulating medium on said semiconductor substrate; etching a part of the insulating medium by using a mask to expose the semiconductor substrate thereunder, the unetched insulating medium forming STI regions; and epitaxially growing a semiconductor layer on said semiconductor substrate between said STI regions as an active region. With the method provided by the present invention, the problem of filling a small-size trench is solved and the problem of STI step height is overcome.