专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201113138053	专利类型	US
公开（公告）号	US9178070(B2)	公开（授权）日	2015.11.03
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou
主分类号	H01L27/12	IPC主分类号	H01L27/12;H01L29/786;H01L29/423;H01L29/66
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	The present application discloses a semiconductor structure and a method for manufacturing the same. A semiconductor structure according to the present invention can adjust the threshold voltage by capacitive coupling between a backgate region either and a source region or a drain region with a common contact, i.e. a source contact or a drain contact, which leads to a simple manufacturing process, a higher integration level, and a lower manufacture cost. Moreover, the asymmetric design of the backgate structure, together with the doping of the backgate region which can be varied as required in an actual device design, can further enhance the effects of adjusting the threshold voltage and improve the performances of the device.