专利详情

专利名称	Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same
申请号	US201213981808	专利类型	US
公开（公告）号	US9147745(B2)	公开（授权）日	2015.09.29
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Liang Qingqing;Zhong Huicai;Wu Hao
主分类号	H01L29/66	IPC主分类号	H01L29/66;H01L29/78;H01L29/786;H01L21/28;H01L29/51
专利有效期	Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same 至Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same	法律状态
说明书摘要	Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the method comprises: sequentially forming a sacrificial layer and a semiconductor layer on a substrate; forming a first cover layer on the semiconductor layer; forming an opening extending into the substrate with the first cover layer as a mask; selectively removing at least a portion of the sacrificial layer through the opening, and filling an insulating material in a gap due to removal of the sacrificial layer; forming one of source and drain regions in the opening; forming a second cover layer on the substrate; forming the other of the source and drain regions with the second cover layer as a mask; removing a portion of the second cover layer; and forming a gate dielectric layer, and forming a gate conductor in the form of spacer on a sidewall of a remaining portion of the second cover layer.