专利详情

专利名称	Substrate structure, semiconductor device, and method for manufacturing the same
申请号	GB20120002556	专利类型	GB
公开（公告）号	GB2488869(B)	公开（授权）日	2016.07.27
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Huicai Zhong;Qingqing Liang
主分类号	H01L21/762	IPC主分类号	H01L21/762;H01L27/04
专利有效期	Substrate structure, semiconductor device, and method for manufacturing the same 至Substrate structure, semiconductor device, and method for manufacturing the same	法律状态
说明书摘要	A substrate structure, a semiconductor device and a manufacturing method thereof are provided. The substrate structure includes: a semiconductor substrate (200); and a first isolation region (310), wherein the first isolation region (310) includes a first trench (206-1), which penetrates the semiconductor substrate (200); and a first dielectric layer (208), which is filled in the first trench (206-1). Since the isolation region penetrates the substrate, two surfaces of the substrate can be used for forming device structures to improve the utilization ratio of the substrate and the integration level of devices.