GASB-FILLED SKUTTERUDITE COMPOSITE MATERIAL AND METHOD OF PREPARING THE SAME
- 申请号:EP20100760861
- 专利类型:EP
- 申请(专利权)人:中国科学院上海硅酸盐研究所
- 公开(公开)号:EP2483205(B1)
- 公开(公开)日:2016.03.30
- 法律状态:
- 出售价格: 面议 立即咨询
专利详情
专利名称 | GASB-FILLED SKUTTERUDITE COMPOSITE MATERIAL AND METHOD OF PREPARING THE SAME | ||
申请号 | EP20100760861 | 专利类型 | EP |
公开(公告)号 | EP2483205(B1) | 公开(授权)日 | 2016.03.30 |
申请(专利权)人 | 中国科学院上海硅酸盐研究所 | 发明(设计)人 | CHEN, LIDONG;CHEN, XIHONG;HE, LIN;HUANG, XIANGYANG;XIONG, ZHEN;ZHANG, WENGING |
主分类号 | C01G51/00 | IPC主分类号 | C01G51/00;B82Y30/00;H01L35/18 |
专利有效期 | GASB-FILLED SKUTTERUDITE COMPOSITE MATERIAL AND METHOD OF PREPARING THE SAME 至GASB-FILLED SKUTTERUDITE COMPOSITE MATERIAL AND METHOD OF PREPARING THE SAME | 法律状态 | |
说明书摘要 | A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05≦̸y<1; and GaSb particles within the filled skutterudite matrix, wherein the composite material comprises 0.05-5 mol % GaSb particles. Compared with conventional materials, the composite material exhibits a substantially increased Seebeck coefficient, a slightly decreased overall thermal conductivity, and a substantially increased thermoelectric performance index across the whole temperature zone from the low temperature end to the high temperature end, as well as a greatly enhanced thermoelectric efficiency. |
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