专利详情

专利名称	Method for manufacturing N-type MOSFET
申请号	US201213878046	专利类型	US
公开（公告）号	US9029225(B2)	公开（授权）日	2015.05.12
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Xu Qiuxia;Zhu Huilong;Zhou Huajie;Xu Gaobo
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L21/28;H01L29/51;H01L29/49;H01L29/66
专利有效期	Method for manufacturing N-type MOSFET 至Method for manufacturing N-type MOSFET	法律状态
说明书摘要	The present disclosure discloses a method for manufacturing an N-type MOSFET, comprising: forming a part of the MOSFET on a semiconductor substrate, the part of the MOSFET comprising source/drain regions in the semiconductor substrate, a replacement gate stack between the source/drain regions above the semiconductor substrate, and a gate spacer surrounding the replacement gate stack; removing the replacement gate stack of the MOSFET to form a gate opening exposing a surface of the semiconductor substrate; forming an interface oxide layer on the exposed surface of the semiconductor; forming a high-K gate dielectric layer on the interface oxide layer in the gate opening; forming a first metal gate layer on the high-K gate dielectric layer; implanting dopant ions into the first metal gate layer; and performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high-K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer.