专利详情

专利名称	Transistor and method for forming the same
申请号	US201314023426	专利类型	US
公开（公告）号	US9023706(B2)	公开（授权）日	2015.05.05
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Zhu Huilong;Luo Zhijiong
主分类号	H01L29/66	IPC主分类号	H01L29/66;H01L29/78;H01L21/265;H01L21/8238;H01L29/51
专利有效期	Transistor and method for forming the same 至Transistor and method for forming the same	法律状态
说明书摘要	The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a channel region under the gate dielectric layer; and a source region and a drain region located in the semiconductor substrate and on respective sides of the channel region, wherein at least one of the source and drain regions comprises a set of dislocations that are adjacent to the channel region and arranged in the direction perpendicular to a top surface of the semiconductor substrate, and the set of dislocations comprises at least two dislocations.