专利详情

专利名称	Semiconductor device, formation method thereof, and package structure
申请号	US201113379347	专利类型	US
公开（公告）号	US9024435(B2)	公开（授权）日	2015.05.05
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhong Huicai;Liang Qingqing;Yan Jiang;Zhao Chao
主分类号	H01L23/34	IPC主分类号	H01L23/34;H01L23/522;H01L23/467;H01L23/473
专利有效期	Semiconductor device, formation method thereof, and package structure 至Semiconductor device, formation method thereof, and package structure	法律状态
说明书摘要	A semiconductor device, a formation method thereof, and a package structure are provided. The semiconductor device comprises: a semiconductor substrate in which a metal-oxide-semiconductor field-effect transistor (MOSFET) is formed; a dielectric layer, provided on the semiconductor substrate and covering the MOSFET, wherein a plurality of interconnection structures are formed in the dielectric layer; and at least one heat dissipation path, embedded in the dielectric layer between the interconnection structures, for liquid or gas to circulate in the heat dissipation path, wherein openings of the heat dissipation path are exposed on the surface of the dielectric layer. The present invention can improve heat dissipation efficiency, and prevent chips from overheating.