专利详情

专利名称	Method for manufacturing P-type MOSFET
申请号	US201214004802	专利类型	US
公开（公告）号	US9196706(B2)	公开（授权）日	2015.11.24
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Xu Qiuxia;Zhu Huilong;Ye Tianchun;Zhou Huajie;Xu Gaobo;Liang Qingqing
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L21/8234;H01L29/66;H01L21/265;H01L21/28;H01L29/49;H01L29/51;H01L21/02;H01L29/423
专利有效期	Method for manufacturing P-type MOSFET 至Method for manufacturing P-type MOSFET	法律状态
说明书摘要	Provided is a method for manufacturing a p-type MOSFET, including: forming a part of the MOSFET on a semiconductor substrate including source/drain regions, a replacement gate, and a gate spacer; removing the replacement gate stack of the MOSFET to form a gate opening; forming an interface oxide layer on the exposed surface of the semiconductor substrate; forming a high-K gate dielectric layer on the interface oxide layer; forming a first metal gate layer; implanting dopant ions into the first metal gate layer; and performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer.