欢迎来到喀斯玛汇智科技服务平台

服务热线: 010-82648522

首页 > 专利推荐 > 专利详情

Method for manufacturing P-type MOSFET

  • 申请号:US201214004802
  • 专利类型:US
  • 申请(专利权)人:中国科学院微电子研究所
  • 公开(公开)号:US9196706(B2)
  • 公开(公开)日:2015.11.24
  • 法律状态:
  • 出售价格: 面议
  • 立即咨询

专利详情

专利名称 Method for manufacturing P-type MOSFET
申请号 US201214004802 专利类型 US
公开(公告)号 US9196706(B2) 公开(授权)日 2015.11.24
申请(专利权)人 中国科学院微电子研究所 发明(设计)人 Xu Qiuxia;Zhu Huilong;Ye Tianchun;Zhou Huajie;Xu Gaobo;Liang Qingqing
主分类号 H01L21/336 IPC主分类号 H01L21/336;H01L21/8234;H01L29/66;H01L21/265;H01L21/28;H01L29/49;H01L29/51;H01L21/02;H01L29/423
专利有效期 Method for manufacturing P-type MOSFET 至Method for manufacturing P-type MOSFET 法律状态
说明书摘要 Provided is a method for manufacturing a p-type MOSFET, including: forming a part of the MOSFET on a semiconductor substrate including source/drain regions, a replacement gate, and a gate spacer; removing the replacement gate stack of the MOSFET to form a gate opening; forming an interface oxide layer on the exposed surface of the semiconductor substrate; forming a high-K gate dielectric layer on the interface oxide layer; forming a first metal gate layer; implanting dopant ions into the first metal gate layer; and performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer.

交易流程

  • 01 选取所需
    专利
  • 02 确认专利
    可交易
  • 03 签订合同
  • 04 上报材料
  • 05 确认变更
    成功
  • 06 支付尾款
  • 07 交付证书

平台保障

1、源头对接,价格透明

2、平台验证,实名审核

3、合同监控,代办手续

4、专员跟进,交易保障

  • 用户留言
暂时还没有用户留言

求购专利

专利交易流程

  • 01 选取所需专利
  • 02 确认专利可交易
  • 03 签订合同
  • 04 上报材料
  • 05 确认变更成功
  • 06 支付尾款
  • 07 交付证书
官方客服(周一至周五:8:30-17:30) 010-82648522