专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201214387143	专利类型	US
公开（公告）号	US9276085(B2)	公开（授权）日	2016.03.01
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Huaxiang;Ma Xiaolong;Qi Changliang;Xu Qiuxia;Chen Dapeng
主分类号	H01L21/02	IPC主分类号	H01L21/02;H01L21/332;H01L29/66;H01L29/78
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.