专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201214406904	专利类型	US
公开（公告）号	US9419108(B2)	公开（授权）日	2016.08.16
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Liang Qingqing;Zhong Huicai;Zhu Huilong;Zhao Chao;Ye Tianchun
主分类号	H01L29/66	IPC主分类号	H01L29/66;H01L29/78
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	One embodiment of present invention provides a method for manufacturing a semiconductor structure, which comprises: forming a gate stack on a semiconductor substrate and removing parts of the substrates situated on two sides of the gate stack; forming sidewall spacers on sidewalls of the gate stack and on sidewalls of the part of the substrate under the gate stack; forming doped regions in parts of the substrate on two sides of the gate stack, and forming a first dielectric layer to cover the entire semiconductor structure; selectively removing parts of the gate stack and parts of the first dielectric layer to form a channel region opening and source/drain region openings; forming a high K dielectric layer on sidewalls of the channel region opening; and implementing epitaxy process to form a continuous fin structure that spans across the channel region opening and the source/drain region openings.