专利详情

专利名称	Field effect transistor device with improved carrier mobility and method of manufacturing the same
申请号	US201013063731	专利类型	US
公开（公告）号	US9240351(B2)	公开（授权）日	2016.01.19
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Luo Zhijiong;Yin Haizhou
主分类号	H01L21/70	IPC主分类号	H01L21/70;H01L21/8238;H01L29/78
专利有效期	Field effect transistor device with improved carrier mobility and method of manufacturing the same 至Field effect transistor device with improved carrier mobility and method of manufacturing the same	法律状态
说明书摘要	The devices are manufactured by replacement gate process and replacement sidewall spacer process, and both tensile stress in the channel region of NMOS device and compressive stress in the channel region of PMOS device are increased by forming a first stress layer with compressive stress in the space within the first metal gate layer of NMOS and a second stress layer with tensile stress in the space within the second metal gate layer of PMOS, respectively. After formation of the stress layers, sidewall spacers of the gate stacks of PMOS and NMOS devices are removed so as to release stress in the channel regions. In particular, stress structure with opposite stress may be formed on sidewalls of the gate stacks of the NMOS device and PMOS device and on a portion of the source region and the drain region, in order to further increase both tensile stress of the NMOS device and compressive stress of the PMOS device.