专利详情

专利名称	Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin
申请号	US201113577942	专利类型	US
公开（公告）号	US9070719(B2)	公开（授权）日	2015.06.30
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhong Huicai;Liang Qingqing;Luo Jun;Zhao Chao
主分类号	H01L21/762	IPC主分类号	H01L21/762;H01L21/336;H01L29/78;H01L29/66;H01L21/8234;H01L21/8238;H01L29/06;H01L21/84
专利有效期	Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin 至Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin	法律状态
说明书摘要	A semiconductor device structure, a method for manufacturing the same, and a method for manufacturing a semiconductor fin are disclosed. In one embodiment, the method for manufacturing the semiconductor device structure comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second direction, the second direction crossing the first direction on the semiconductor substrate, and the gate line intersecting the fin with a gate dielectric layer sandwiched between the gate line and the fin; forming a dielectric spacer surrounding the gate line; and performing inter-device electrical isolation at a predetermined position, wherein isolated portions of the gate line form independent gate electrodes of respective devices.