专利详情

专利名称	Isolation region, semiconductor device and methods for forming the same
申请号	US201113119129	专利类型	US
公开（公告）号	US9082717(B2)	公开（授权）日	2015.07.14
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Zhu Huilong;Luo Zhijiong
主分类号	H01L29/16	IPC主分类号	H01L29/16;H01L21/336;H01L21/31;H01L21/308;H01L21/762;H01L29/66;H01L29/78
专利有效期	Isolation region, semiconductor device and methods for forming the same 至Isolation region, semiconductor device and methods for forming the same	法律状态
说明书摘要	An isolation region is provided. The isolation region includes a first groove and an insulation layer filling the first groove. The first groove is embedded into a semiconductor substrate and includes a first sidewall, a bottom surface and a second sidewall that extends from the bottom surface and joins to the first sidewall. An angle between the first sidewall and a normal line of the semiconductor substrate is larger than a standard value. A method for forming an isolation region is further provided. The method includes: forming a first trench on a semiconductor substrate, wherein an angle between a sidewall of the first trench and a normal line of the semiconductor substrate is larger than a standard value; forming a mask on the sidewall to form a second trench on the semiconductor substrate by using the mask; and forming an insulation layer to fill the first and second trenches. A semiconductor device and a method for forming the same are still further provided. In the semiconductor device, a material of the semiconductor substrate is interposed between a second groove bearing a semiconductor layer for forming an S/D region and the first and second sidewalls. The present invention is beneficial to reduce leakage current.