专利详情

专利名称	Semiconductor device and method for forming the same
申请号	US201113132985	专利类型	US
公开（公告）号	US8749067(B2)	公开（授权）日	2014.06.10
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhao Chao;Wang Wenwu;Zhu Huilong
主分类号	H01L23/48	IPC主分类号	H01L23/48;H01L23/52;H01L29/40;H01L21/4763
专利有效期	Semiconductor device and method for forming the same 至Semiconductor device and method for forming the same	法律状态
说明书摘要	The present invention provides a semiconductor device. The semiconductor device comprises contact plugs that comprise a first contact plug formed by a first barrier layer arranged on the source and drain regions and a tungsten layer arranged on the first barrier layer; and second contact plugs comprising a second barrier layer arranged on both of the metal gate and the first contact plug and a conductive layer arranged on the second barrier layer. The conductivity of the conductive layer is higher than that of the tungsten layer. A method for forming the semiconductor device is also provided. The present invention provides the advantage of enhancing the reliability of the device when using the copper contact technique.