专利详情

专利名称	Semiconductor device and method of fabricating the same
申请号	US201013060468	专利类型	US
公开（公告）号	US9018739(B2)	公开（授权）日	2015.04.28
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou
主分类号	H01L29/04	IPC主分类号	H01L29/04;H01L29/78;H01L29/10;H01L29/165;H01L29/49;H01L29/51;H01L29/66
专利有效期	Semiconductor device and method of fabricating the same 至Semiconductor device and method of fabricating the same	法律状态
说明书摘要	The present application discloses a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate; a first semiconductor layer on the semiconductor substrate; a second semiconductor layer surrounding the first semiconductor layer; a high k dielectric layer and a gate conductor formed on the first semiconductor layer; source/drain regions formed in the second semiconductor layer, wherein the second semiconductor layer has a slant sidewall in contact with the first semiconductor layer. The semiconductor device has an increased output current, an increased operating speed, and a reduced power consumption due to the channel region of high mobility.