专利详情

专利名称	Two-terminal memory cell and semiconductor memory device based on different states of stable current
申请号	US201113320331	专利类型	US
公开（公告）号	US9013918(B2)	公开（授权）日	2015.04.21
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Liang Qingqing;Tong Xiaodong;Zhong Huicai;Zhu Huilong
主分类号	G11C11/39	IPC主分类号	G11C11/39;G11C17/06;H01L27/102
专利有效期	Two-terminal memory cell and semiconductor memory device based on different states of stable current 至Two-terminal memory cell and semiconductor memory device based on different states of stable current	法律状态
说明书摘要	A two-terminal memory cell includes a first P-type semiconductor layer, a first N-type semiconductor layer, a second P-type semiconductor layer, and a second N-type semiconductor layer arranged in sequence. A first data state may be stored in the memory cell by applying a forward bias, which is larger than a punch-through voltage VBO, between the first P-type semiconductor layer and the second N-type semiconductor layer. A second data state may be stored in the memory cell by applying a reverse bias, which is approaching to the reverse breakdown region of the memory cell, between the first P-type semiconductor layer and the second N-type semiconductor layer. In this way, the memory cell may be effectively used for data storage.