专利详情

专利名称	Method of manufacturing a semiconductor fin using sacrificial layer
申请号	US201213580965	专利类型	US
公开（公告）号	US9012274(B2)	公开（授权）日	2015.04.21
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Zhu Huilong;Luo Zhijiong
主分类号	H01L21/84	IPC主分类号	H01L21/84;H01L21/20;H01L27/12;H01L29/06;H01L29/66
专利有效期	Method of manufacturing a semiconductor fin using sacrificial layer 至Method of manufacturing a semiconductor fin using sacrificial layer	法律状态
说明书摘要	The present invention provides a method for manufacturing a semiconductor structure, comprising the steps of: providing a semiconductor substrate, forming an insulating layer on the semiconductor substrate, and forming a semiconductor base layer on the insulating layer; forming a sacrificial layer and a spacer surrounding the sacrificial layer on the semiconductor base layer, and etching the semiconductor base layer by taking the spacer as a mask to form a semiconductor body; forming an insulating film on sidewalls of the semiconductor body; removing the sacrificial layer and the semiconductor body located under the sacrificial layer to form a first semiconductor fin and a second semiconductor fin. Correspondingly, the present invention further provides a semiconductor structure. In the present invention, an oxide film is formed on the sidewalls of the two semiconductor fins that are far away from each other, while only the sidewalls of the two semiconductor fins that are opposite to each other are exposed, such that conventional operations may be easily performed to the sidewalls opposite to each other in the subsequent process.