专利详情

专利名称	Method of manufacturing semiconductor device
申请号	US201213989164	专利类型	US
公开（公告）号	US9006057(B2)	公开（授权）日	2015.04.14
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Qin Changliang;Hong Peizhen;Yin Huaxiang
主分类号	H01L21/36	IPC主分类号	H01L21/36;H01L27/088;H01L29/78;H01L21/306;H01L29/66;H01L21/3065;H01L21/265
专利有效期	Method of manufacturing semiconductor device 至Method of manufacturing semiconductor device	法律状态
说明书摘要	A method of manufacturing a semiconductor device is disclosed. In one embodiment, the method comprises: forming a gate stack on a substrate; etching the substrate on both sides of the gate stack to form C-shaped source/drain grooves; and wet-etching the C-shaped source/drain grooves to form Σ-shaped source/drain grooves. With this method, it is possible to effectively increase stress applied to a channel region, to accurately control a depth of the source/drain grooves, and to reduce roughness of side walls and bottom portions of the grooves and thus reduce defects by etching the C-shaped source/drain grooves and then further wet-etching them to form the Σ-shaped source/drain grooves.