3D semiconductor memory device and manufacturing method thereof
- 申请号：US201113376276
- 专利类型：US
- 申请（专利权）人：中国科学院微电子研究所
- 公开(公开)号：US9000409(B2)
- 公开(公开)日：2015.04.07
- 法律状态：
- 出售价格： 面议 立即咨询
专利详情
| 专利名称 | 3D semiconductor memory device and manufacturing method thereof | ||
| 申请号 | US201113376276 | 专利类型 | US |
| 公开（公告）号 | US9000409(B2) | 公开（授权）日 | 2015.04.07 |
| 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Huo Zongliang;Liu Ming |
| 主分类号 | H01L47/00 | IPC主分类号 | H01L47/00;H01L27/24;H01L45/00 |
| 专利有效期 | 3D semiconductor memory device and manufacturing method thereof 至3D semiconductor memory device and manufacturing method thereof | 法律状态 | |
| 说明书摘要 | The present application discloses a 3D semiconductor memory device having 1T1R memory configuration based on a vertical-type gate-around transistor, and a manufacturing method thereof. A on/off current ratio can be well controlled by changing a width and a length of a channel of the gate-around transistor, so as to facilitate multi-state operation of the 1T1R memory cell. Moreover, the vertical transistor has a smaller layout size than a horizontal transistor, so as to reduce the layout size effectively. Thus, the 3D semiconductor memory device can be integrated into an array with a high density. | ||
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