专利详情

专利名称	Non-volatile memory device using finfet and method for manufacturing the same
申请号	US201013061461	专利类型	US
公开（公告）号	US8981454(B2)	公开（授权）日	2015.03.17
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Yin Haizhou;Luo Zhijiong
主分类号	H01L29/788	IPC主分类号	H01L29/788;H01L29/66;H01L29/78
专利有效期	Non-volatile memory device using finfet and method for manufacturing the same 至Non-volatile memory device using finfet and method for manufacturing the same	法律状态
说明书摘要	The present application discloses a non-volatile memory device, comprising a semiconductor fin on an insulating layer; a channel region at a central portion of the semiconductor fin; source/drain regions on both sides of the semiconductor fin; a floating gate arranged at a first side of the semiconductor fin and extending in a direction further away from the semiconductor fin; and a first control gate arranged on top of the floating gate or covering top and sidewall portions of the floating gate. The non-volatile memory device reduces a short channel effect, has an increased memory density, and is cost effective.