专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201214002456	专利类型	US
公开（公告）号	US8969164(B2)	公开（授权）日	2015.03.03
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Luo Zhijiong;Yin Haizhou
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L29/78;H01L29/66;H01L29/08;H01L21/84;H01L27/12;H01L21/8234;H01L29/51
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	A semiconductor structure comprises a substrate, a gate stack, a base area, and a source/drain region, wherein the gate stack is located on the base area, the source/drain region is located in the base area, and the base area is located on the substrate. A supporting isolated structure is provided between the base area and the substrate, wherein part of the supporting structure is connected to the substrate; a cavity is provided between the base area and the substrate, wherein the cavity is composed of the base area, the substrate and the supporting isolated structure. A stressed material layer is provided on both sides of the gate stack, the base area and the supporting isolated structure. Correspondingly, a method is provided for manufacturing such a semiconductor structure, which inhibits the short channel effect, reduces the parasitic capacitance and leakage current, and enhances the steepness of the source/drain region.