专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201113379407	专利类型	US
公开（公告）号	US8957481(B2)	公开（授权）日	2015.02.17
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Zhong Huicai;Yin Haizhou;Luo Zhijiong
主分类号	H01L21/70	IPC主分类号	H01L21/70;H01L27/12;H01L21/8238;H01L21/336;H01L21/308;H01L21/762;H01L29/78;H01L29/66
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	The present application discloses a semiconductor structure and a method for manufacturing the same. Compared with conventional approaches to form contacts, the present disclosure reduces contact resistance and avoids a short circuit between a gate and contact plugs, while simplifying manufacturing process, increasing integration density, and lowering manufacture cost. According to the manufacturing method of the present disclosure, second shallow trench isolations are formed with an upper surface higher than an upper surface of the source/drain regions. Regions defined by sidewall spacers of the gate, sidewall spacers of the second shallow trench isolations, and the upper surface of the source/drain regions are formed as contact holes. The contacts are formed by filling the contact holes with a conductive material. The method omits the steps of etching for providing the contact holes, which lowers manufacture cost. By forming the contacts self-aligned with the gate, the method avoids misalignment and improves performance of the device while reducing a footprint of the device and lowering manufacture cost of the device.