专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201113816065	专利类型	US
公开（公告）号	US8932927(B2)	公开（授权）日	2015.01.13
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhou Huajie;Xu Qiuxia
主分类号	H01L21/00	IPC主分类号	H01L21/00;H01L29/66;H01L29/78
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	The present application discloses a semiconductor device structure and a method for manufacturing the same, wherein the method comprises: forming a semiconductor substrate comprising a local SOI structure having a local buried isolation dielectric layer; forming a fin on the silicon substrate on top of the local buried isolation dielectric layer; forming a gate stack structure on the top and side faces of the fin; forming source/drain structures in the fin on both sides of the gate stack structure; and performing metallization. The present invention makes use of traditional quasi-planar based top-down processes, thus the manufacturing process thereof is simple to implement; the present invention exhibits good compatibility with CMOS planar process and can be easily integrated, therefore, short channel effects are suppressed desirably, and MOSFETs are boosted to develop towards a trend of downscaling size.