专利详情

专利名称	PD SOI device with a body contact structure
申请号	US201013128907	专利类型	US
公开（公告）号	US8937354(B2)	公开（授权）日	2015.01.20
申请（专利权）人	中国科学院上海微系统与信息技术研究所	发明（设计）人	Chen Jing;Wu Qingqing;Luo Jiexin;Huang Xiaolu;Wang Xi
主分类号	H01L27/12	IPC主分类号	H01L27/12;H01L29/423;H01L29/786;H01L21/266;H01L29/66;H01L29/78
专利有效期	PD SOI device with a body contact structure 至PD SOI device with a body contact structure	法律状态
说明书摘要	The present invention discloses a PD SOI device with a body contact structure. The active region of the PD SOI device includes: a body region; a gate region, which is inverted-L shaped, formed on the body region; a N-type source region and a N-type drain region, formed respectively at the two opposite sides of the anterior part the body region; a body contact region, formed at one side of the posterior part of the body region, which is side-by-side with the N-type source region; and a first silicide layer, formed on the body contact region and the N-type source region, which is contact to both of the body contact region and the N-type source region. The body contact region of the device is formed on the border of the source region and the leading-out terminal of the gate electrode. It can suppress floating body effect of the PD SOI device meanwhile not increasing the chip area, thereby overcoming the shortcoming in the prior art that the chip area is enlarged when the traditional body contact structure is employed. Furthermore, the fabrication process provided herein is simple and compatible to the CMOS technology.