专利详情

专利名称	Semiconductor memory cell, device, and method for manufacturing the same
申请号	US201113512643	专利类型	US
公开（公告）号	US8927963(B2)	公开（授权）日	2015.01.06
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Huo Zongliang;Liu Ming
主分类号	H01L29/06	IPC主分类号	H01L29/06;H01L31/00;H01L29/78
专利有效期	Semiconductor memory cell, device, and method for manufacturing the same 至Semiconductor memory cell, device, and method for manufacturing the same	法律状态
说明书摘要	A semiconductor memory cell, a semiconductor memory device, and a method for manufacturing the same are disclosed. The semiconductor memory cell may comprise: a substrate; a channel region on the substrate; a gate region above the channel region; a source region and a drain region on the substrate and at opposite sides of the channel region; and a buried layer, which is disposed between the substrate and the channel region and comprises a material having a forbidden band narrower than that of a material for the channel region material. The buried layer material has a forbidden band narrower than that of the channel region material, so that a hole barrier is formed in the buried layer. Due to the barrier, it is difficult for holes stored in the buried layer to leak out, resulting in an improved information holding duration of the memory cell utilizing the floating-body effect.